Samsung Electronics will start mass production of 3-nanometer semiconductors based on gate all-around (GAA) technology on June 30, according to BusinessKorea.
According to reports, Samsung Electronics will officially announce the mass production of GAA-based 3nm semiconductors on June 30. The GAA transistor structure is superior to the current FinFET structure because it reduces die size and power consumption.
If the news is true, then Samsung Electronics will preempt TSMC and Intel Mass production of 3nm chips, the latter two companies plan to start mass production of 3nm chips in the second half of this year and the second half of next year, respectively.
It is understood that in terms of the highly competitive 3nm process technology, Samsung Electronics and TSMC have different technical routes. Samsung Electronics took the lead in adopting gate-all-around (GAA) transistors, while TSMC continued to use Fin Field Effect Transistor (FinFET) architecture. . Samsung Electronics has previously stated that the 3nm process technology using full surround gate transistor technology will improve performance by 30%, reduce energy consumption by 50%, and increase logic area efficiency by more than 45% compared with the current fin field effect transistor architecture.
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- 2022-06-29It is reported that Samsung Electronics will start mass production of 3nm chips on June 30
- 2021-12-24TSMC will mass-produce 3nm chips in the fourth quarter of next year
- 2021-12-05TSMC sprints into the 3nm process and has now entered the trial production stage
- 2021-06-18It is reported that TSMC plans to supply 3nm chips to Apple in the second half of 2022
- 2021-06-02TSMC’s 4nm process technology will be trial-produced ahead of schedule in the third quarter
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