Chuangyebang was informed that recently, the third-generation semiconductor company Nanjing Kuanneng Semiconductor Co., Ltd. (“Kuanneng Semiconductor”) announced the completion of an angel round of financing of over 200 million yuan. This round of financing was jointly invested by Yunqi Capital and others.
Kuanneng Semiconductor was established in November 2021. The company’s core team includes a number of world-class silicon carbide semiconductor process and manufacturing experts, masters the core technology of the full process of silicon carbide devices, and has more than 20 years of experience in mass production of related products. The company’s first production line has landed in Nanjing and is under construction. After completion, it will be the largest silicon carbide semiconductor wafer fab in China.
Broad Energy Semiconductor is deeply engaged in the field of power semiconductor device foundry, providing high-yield, high-quality and competitive products for domestic and foreign semiconductor design companies and IDM manufacturers. The company’s own standard process platform can assist customers to quickly introduce mass production and promote process technology iteration. At the same time, the company supports the development of new products and provides customized process services. The company also has trench MOSFET technology.
Semiconductor materials have undergone several generations of changes as the basis for industrial development. At present, more than 90% of semiconductor products are still made of silicon as the substrate. However, due to the physical properties of the material itself, silicon-based power devices are difficult to meet the requirements of new energy vehicles and Emerging applications such as photovoltaic inverters require high-power, high-frequency performance of devices. The third-generation semiconductor represented by silicon carbide has gradually attracted market attention due to its excellent physical properties, and has become an ideal material for making high-power high-frequency devices.
Due to the high scarcity of silicon carbide trench structures that can be mass-produced in the world at present, only ROHM’s double trench structure, Infineon’s semi-encapsulated trench structure, and Japan’s Sumitomo’s grounded double-buried structure are the technical barriers for the company’s device structure. Products bring cost and performance advantages.
The third-generation semiconductor represented by silicon carbide can play an important role in photovoltaic power generation systems. The cost of silicon-based inverters accounts for 10% of the system, but it is the main source of system energy loss. Photovoltaic inverters using silicon carbide MOSFET power modules Converter, the conversion efficiency can be increased to more than 99%, and the energy loss can be reduced by more than 50%, thus promoting important breakthroughs in the volume, life and cost of the power generation system.
According to Yole’s forecast, new energy vehicles will be the most important application of silicon carbide power devices by 2025. With the rapid increase in sales of new energy vehicles, the application of silicon carbide power devices in motor drives, OBC, DC/DC and other components will also open up a broader market for them. Global electric vehicle leader Tesla has used silicon carbide MOSFETs as its motor inverter solution on the Model 3 to replace traditional silicon-based IGBTs.
It is expected that the demand for silicon carbide MOSFETs on new energy vehicles will far exceed that of silicon carbide diodes in the future, and device factories that cannot produce high-yield silicon carbide MOSFETs will lose the market. As an important link in the silicon carbide industry chain, device manufacturing plays a decisive role in the yield and performance of products.
Zheng Ruiting, executive director of Yunqi Capital, said that Yunqi has long been optimistic about the growth potential of third-generation semiconductors as a key carbon neutral technology, and will continue to track the layout. The Kuaneng team has led the industrialization of the world’s top SIC foundry companies, and has fully participated in the entire process from process design, equipment selection, high-yield mass production, and large-scale shipments. It has accumulated rich experience and has continuous iteration capabilities. We are optimistic that it will establish a globally competitive SIC device mass production line in China, quickly form a high-yield, high-quality, full-series foundry capability, and help the rapid development of the domestic SIC industry.
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China Investment Network Venture Capital
Related events
- Kuanneng Semiconductor completed an angel round of financing of 200 million yuan, and Yunqi Capital participated in the investment2022-06-08
- Inxin Semiconductor completed the A+ round of financing of hundreds of millions of yuan, led by Yunqi Capital2021-11-29
- Xinyuan Semiconductor completes nearly $100 million in Pre-A round financing2021-04-06
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