“Rongsi Semiconductor” completed the Pre-A round of financing, led by Dimension Capital


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Chuangyebang was informed that recently, Chengdu Rongsi Semiconductor Co., Ltd. (hereinafter referred to as “Rongsi Semiconductor”) announced the completion of Pre-A round of financing. This round of financing was led by Dimension Capital, and Shaanxi Sanyuan Aviation Investment Fund Partnership (Limited) Partnership), Nanjing Taihua Equity Investment Management Center (Limited Partnership) and other institutions followed suit.

According to public information, Rongxi Semiconductor was established in December 2019. It is a design developer of wide-bandgap semiconductor silicon carbide power devices, focusing on the design and development of wide-bandgap semiconductor silicon carbide power devices.

Rongsi Semiconductor has an international team that masters the core technology of silicon carbide, integrates advanced silicon carbide manufacturing process platforms from Taiwan and Europe, and combines mainland packaging and testing and application solutions to establish materials, epitaxy, wafer manufacturing and packaging testing. Complete supply chain of IATF 16949 quality management standard, independent development of automotive-grade silicon carbide devices.

Rongsi silicon carbide products are divided into cost-effective “NovuSiC®” and high-reliability “DuraSiC®” series. Products include SiC EJBS™ (Enhanced Junction Barrier Schottky) diodes and SiC MOSFETs; silicon-based products include ideal diodes MCR® (MOS-Controlled Rectifier) ​​and FRMOS (Fast Recovery MOSFET) with a high junction temperature of 175˚C. Widely used in industrial control power supply, industrial motor, photovoltaic inverter, energy storage, charging pile and new energy vehicles and other fields.

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