From basic 2D materials to metal sulfides, the library of 2D layered materials is constantly expanding. Two-dimensional layered materials possess new properties that contribute to two-dimensional materials and have great potential in the research and development of next-generation electronic and optoelectronic devices.
The doping process is an effective method to control the special properties of two-dimensional materials, which can be applied to logic circuits, sensors and optoelectronic devices. However, doping necessitates the use of additional chemicals that can contaminate the material. This technology has historically been only possible at specific steps in the material synthesis or device fabrication process.
In a new paper published by eLight , a team of scientists led by Prof. Zhang Han from Shenzhen University and Prof. Paras N Prasad from the University of Buffalo has manipulated electron transfer through neutron transmutation doping. Their paper titled In-Situ Neutron-transmutation for Substitutional Doping in 2D layeredium Selenide Based Phototransistor demonstrates this change for the first time.
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Neutron transmutation doping (NTD) is a controlled in-situ exchange doping process that utilizes nuclear reactions between thermal neutrons and nuclei in semiconductors. This process provides a way to dope 2D materials without additional reagents. It can be introduced at any step in the fabrication of a 2D material device, even after fabrication is complete.
The NTD process was born in 1975 and is used in bulk semiconductors such as silicon (Si), gallium phosphide (GaP), and indium phosphide (InP). In 1991, shallow donors related to tin (Sn) have been able to be uniformly introduced into bulk indium selenide (InSe) crystals by the NTD process. However, the carrier density of doped indium selenide is lower, further improving the performance of photodetectors based on 2D layered indium selenide. If the performance of photodetectors can be manipulated and optimized by “clean” methods, NTDs will be an attractive process.
a) Transmutation doping scheme of 2D InSe, including capture of thermal neutrons and decay of γ and β particles; b) Scheme of 2D InSe devices; c) Time responses of devices before and after transmutation | Ref [1] ]
For the first time, the research team achieved two-dimensional layered indium selenide by NTD doping. They succeeded in narrowing the band gap and increasing the electron mobility of Sn-doped layered indium selenide, increasing the field-effect electron mobility from 1.92 cm 2 ·V -1 ·s -1 to 195 cm2 ·V -1 ·s -1 -1 . At the same time, the responsivity of the photodetector is increased by about 50 times, reaching 397 A/W.
The research team believes that the NTD process has huge application prospects, and it will bring new and significant opportunities for materials technology. The NTD process can control and introduce dopants at any time, improving device efficiency. By doping at the atomic level, researchers can ensure that the dopant is in the correct location and precisely assess the effect of the dopant at that location. At the same time, the NTD process can also be used to protect personnel safety.
references
[1] Guo, Z., Zeng, Y., Meng, F. et al. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor. eLight 2, 9 (2022). https://ift .tt/gprxqPV
[2] https://ift.tt/1CBYMKX
Compilation: Matrix Star
Editor: Jin Xiaoming
Typesetting: Yin Ningliu
Source of the title map: Reference [1]
research team
Corresponding author Zhang Han, professor/doctoral supervisor, National Young Talents, National Excellent Youth, OSA Fellow, RSC fellow, Global Highly Cited Scientist (2018-2021). He has/is serving as editorial board member or guest editorial board member of National Science Review , Photonics Research , Nano-photonics , Ultrafast Science , “China Laser”, “Acta Photonics” and other journals. He has been engaged in the research of two-dimensional optoelectronic materials and functional devices for a long time, and has published more than 100 academic papers in the first area of the Chinese Academy of Sciences as the corresponding author, including 1 paper in PNAS , 1 paper in Science Advance , 4 papers in Nature Communications , 1 paper in Light Science & Applications , and 1 in National Science Review articles, 15 articles in Advanced Materials , etc. Wrote the English book Semiconducting Black Phosphorus as the first author (Taylor & Francis Group 2021). 4 papers were selected as one of the 100 most influential international academic papers in China, PNAS papers were selected as one of the top 10 progresses in optics in China in 2018 – applied research, 160 papers have been cited over 100 times, and 110 ESI highly cited papers. All papers have been cited more than 50,000 times by peers at home and abroad, with an H index of 130.
Paper information
Publish the journal eLight
Published on June 6, 2022
Paper title In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor
(DOI: https://ift.tt/HJRjkPp)
Article Field Two-dimensional Optoelectronic Materials
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